Integrated electrostatic discharge (ESD) device

Details Integrated electrostatic discharge (ESD) device Integrated electrostatic discharge (ESD) device

2009-06-11

2011-11-08

Salce, Patrick (Department: 2836)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S378000, C257S408000, C257S273000, C257S336000, C257S344000, C438S309000, C438S356000, C438S163000, C438S188000, C361S056000

Reexamination Certificate

active

08053843

ABSTRACT:
A semiconductor device for ESD protection includes a semiconductor substrate of a first conductivity type and a well region of a second conductivity type formed within the substrate. The well region is characterized by a first depth. The device includes an MOS transistor, a first bipolar transistor, and a second bipolar transistor. The MOS transistor includes a first lightly doped drain (LDD) region of a second depth within the well region, and a drain region and an emitter region within in the first LDD region. The emitter region is characterized by a second conductivity type. The first bipolar transistor is associated with the emitter region, the first LDD region, and the well region, and is characterized by a first trigger voltage. The second bipolar transistor is associated with the first LDD region, the well region, and the substrate, and is characterized by a second trigger voltage.

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