Integrated dynamic random access memory element, array and...

Details Integrated dynamic random access memory element, array and... Integrated dynamic random access memory element, array and...

2007-04-10

2007-04-10

Kebede, Brook (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27090

Reexamination Certificate

active

10877755

ABSTRACT:
An integrated dynamic random access memory element includes two cells for the storage of two respective bits. A source region and a drain region are included. Each cell comprises a field-effect transistor having a gate and an intermediate portion which extend between the source and drain regions. A channel is provided in the intermediate portion of the transistor for each cell. A polarization electrode is placed between the respective intermediate portions of the two transistors. This polarization electrode is capacitively coupled to the intermediate portion of each transistor and is used to store the first and second bits.

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