Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2005-09-06
2005-09-06
Tran, Michael (Department: 2827)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S201000
Reexamination Certificate
active
06940774
ABSTRACT:
An integrated dynamic memory includes a memory cell array having memory cells for storing a charge corresponding to an information bit. The memory cell array has a regular cell area with regular memory cells, a first test cell area with first test cells and a second test cell area with second test cells. A control unit is provided for refreshing the charge contents of the regular memory cells with a first refresh time, a control unit is provided for refreshing the charge contents of the first test cells with a second refresh time, and the charge contents of the second test cells with a third refresh time. The first refresh time is shorter than the second refresh time and the latter is shorter than the third refresh time. An evaluation unit is provided for detecting memory cell defects in the first and second test cell areas.
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Greenberg Laurence A.
Infineon - Technologies AG
Locher Ralph E.
Stemer Werner H.
Tran Michael
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