Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-07-14
1999-01-05
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257370, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
058566970
ABSTRACT:
A new method of isolating a polysilicon emitter from the base region of a bipolar transistor, trenching the polysilicon emitter into the semiconductor substrate, and maintaining a consistent base width of a bipolar transistor independent of variations in emitter mask thicknesses is disclosed. The polysilicon emitter isolation provides for better electrical breakdown characteristics between the emitter and the base by protecting the dielectric layer between the polysilicon emitter and base regions from defects and contamination associated with the BiCMOS manufacturing environment. The polysilicon emitter is trenched into the semiconductor substrate in order to reduce transistor operation problems associated with hot electron injection. Consistent base widths improve transistor performance uniformity thereby improving manufacturability and reliability.
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Brown Brian J.
Chambers Stephen
Chau Robert
Chern Chan-Hong
Yau Leopoldo D.
Intel Corporation
Meier Stephen
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