Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2011-08-30
2011-08-30
Nguyen, Ha Tran T (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C257S417000, C257S419000, C257SE29324, C438S050000, C438S053000
Reexamination Certificate
active
08008738
ABSTRACT:
An integrated differential pressure sensor includes, in a monolithic body of semiconductor material, a first face and a second face, a cavity extending at a distance from the first face and delimited therewith by a flexible membrane formed in part by epitaxial material from the monolithic body and in part by annealed epitaxial material from the monolithic body, an access passage in fluid communication with the cavity, and in the flexible membrane at least one transduction element configured so as to convert a deformation of the flexible membrane into electrical signals. The cavity is formed in a position set at a distance from the second face and is delimited at the second face with a portion of the monolithic body.
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Baldo Lorenzo
Barlocchi Gabriele
Corona Pietro
Villa Flavio Francesco
Jorgenson Lisa K.
Nguyen Ha Tran T
Scarlett Shaka
Seed IP Law Group PLLC
STMicroelectronics S.r.l.
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