Integrated device with a structure for protection against high e

Details Integrated device with a structure for protection against high e Integrated device with a structure for protection against high e

1995-11-07

1998-07-07

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257356, 257492, 257493, H01L 2362

Patent

active

057773661

ABSTRACT:
An integrated device including a structure for protection against electric fields. The protection structure may include a first region of conducting material electrically connected to the gate/source region of the device at a first potential. The protection structure may also include a second region of conducting material electrically connected to the drain region of the device at a second potential differing from the first. In one embodiment, the first region of conducting material is comb-shaped, and includes a first number of fingers separated by a plurality of gaps. The second region of conducting material includes portions extending at the aforementioned gaps to form a comb structure. Thus, the body of semiconductor material of the device sees a protection region formed by a pair of interlocking comb structures at an intermediate potential between the first and second potentials.

REFERENCES:
patent: 5040045 (1991-08-01), McArthur et al.
patent: 5434445 (1995-07-01), Ravanelli et al.

Affiliated with

Also associated with

Rating

Integrated device with a structure for protection against high e does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated device with a structure for protection against high e, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated device with a structure for protection against high e will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1209121