Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-09-16
1997-09-09
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257509, 257500, H01L 2976, H01L 2900
Patent
active
056659946
ABSTRACT:
A device integrated on a chip of a semiconductor material is disclosed which comprises an NPN bipolar transistor and an N-channel MOSFET transistor in an emitter switching configuration, both being vertical conduction types. The bipolar transistor has its base and emitter regions buried; the MOSFET transistor is formed with an N region bounded by the base and the emitter regions and isolated by a deep base contact and isolation region. To improve the device performance, especially at large currents, an N+ region is provided which extends from the front of the chip inwards of the isolated region and around the MOSFET transistor. In one embodiment of the invention, a MOSFET drive transistor is integrated which has its drain terminal in common with the collector of the bipolar transistor, its source terminal connected to the base of the bipolar transistor, and its gate electrode connected to the gate electrode of the MOSFET transistor in the emitter switching configuration.
REFERENCES:
patent: 5317182 (1994-05-01), Zambrano et al.
Carlson David V.
CO.RI.M.ME. Consorzio per la Ricerca sulla Microelettronica nel
Fahmy Wael
Santarelli Bryan A.
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