Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-02-27
2007-02-27
Malsawma, Lex H. (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S652000, C257SE21575
Reexamination Certificate
active
10669762
ABSTRACT:
A method for providing an improved integrated circuit device is disclosed. The method comprises the steps of providing active and passive areas in the substrate, providing a plurality of slots in the substrate after providing the active and passive areas, and oxidizing the plurality of slots. The method further comprises providing metal in each of the plurality of slots, providing a dielectric coating over the slots, and providing etched contacts in select areas remote from the location of the slots. Additionally, the method provides an additional layer of metal that interconnects the contacts and the buried metal in select areas where contacts were etched, resulting in metal of three levels; and provides one level of the metal is surface and two levels of the metal that comprise a buried power buss (BPB).
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Malsawma Lex H.
Micrel Inc.
Sawyer Law Group LLP
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