Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-04-01
1995-06-06
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257558, 257365, H01L 2950, H01L 2970, H01L 2978
Patent
active
054225094
ABSTRACT:
A bipolar control transistor, forming part of an integrated current-limiter device comprises inside an epitaxial layer superimposed over a semiconductor substrate of a first type of conductivity, a base region of a second type of conductivity accessible from a base contact and regions of collector and emitter of the first type of conductivity contained in the base region and accessible from respective collector and emitter contacts. The base region comprises at least one highly-doped deep-body region which contains almost completely said emitter region, a lightly-doped body region which contains the collector region and an intermediate-doped region which co-operates with the first deep-body region to completely contain the emitter region and a surface area of the base region that is included between the regions of collector and emitter. There is also at least one first portion of a layer of polysilicon superimposed and self-aligned with the surface area between the regions of collector and emitter and electrically connected to the collector contact of the bipolar transistor.
REFERENCES:
patent: 4669177 (1987-06-01), D'Arrigo et al.
patent: 4705759 (1987-11-01), Lidow et al.
patent: 4902640 (1990-02-01), Sachitano et al.
patent: 5221850 (1993-06-01), Sakurai
Materials Science and Engineering B, vol. B2, No. 1-3, Feb. 1989, J. Middlehoek, `High Energy Implanted Transistor Fabrication`.
Neues aus der Technik, No. 3, 15 Aug. 1986, Wurzburg DE p. 1, `Lateraler Hochspannungstransistor`.
Consorzio per la Ricerca Sulla Microelettronica Nel Meszzogiorno
Groover Robert
Hardy David B.
Limanek Robert P.
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