Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1994-12-30
1996-11-26
Powell, William
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
1566311, 148 334, 437974, H01L 2100, B44C 122
Patent
active
055781624
ABSTRACT:
An integrated semiconductor device is formed by bonding the conductors of one fabricated semiconductor device having a substrate to the conductors on another fabricated semiconductor device having a substrate, flowing an etch-resist in the form of an uncured cement (e.g. epoxy) between the devices, allowing the etch-resist to solidify, and removing the substrate from one of the semiconductor devices. Preferably the etch-resist epoxy is retained to impart mechanical strength to the device. More specifically, a hybrid semiconductor device is formed by bonding the conductors of one or more GaAs/AlGaAs multiple quantum well modulators to conductors on an IC chip, wicking an uncured epoxy between the modulators and the chip, allowing the epoxy to cure, and removing the substrate from the modulator.
REFERENCES:
patent: 5244818 (1993-09-01), Jokerst et al.
patent: 5385632 (1995-01-01), Goossen
K. W. Goossen, G. D. Boyd, J. E. Cunningham, W. Y. Jan, D. A. B. Miller, D. S. Chemia, and R. M. Lum, "GaAs-A1GaAs Multiquantum Well Reflection Modulators Grown on GaAs and Silicon Substrates" in IEEE Photon. Tech. Lett., vol. 1, p. 304, 1989.
P. Barnes, P. Zouganeli, A. Rivers, M. Whitehead, G. Parry, K. Woodbridge, and C. Roberts, "GaAs/A1GaAs Multiple Quantum Well Optical Modulator Using Multilayer Reflector Stack Grown on Si Substrate" in Electron. Lett., vol. 25, p. 995, 1989.
P. Barnes, K. Woodbridge, C. Roberts, A. A. Stride, A. Rivers, M. Whitehead, and G. Parry, "GaAs multiple quantum well microresonator modulators grown on silicon substrates" in Opt. Quantum Electron, vol. 24, p.S A177, 1992.
K. W. Goossen, J. A. Walker, J. E. Cunningham, W. Y. Jan, D. A. B. Miller, S. K. Tweksbury, and L. A. Hornak, "Monolithic Integration of GaAS/A1GaAs Multiple Quantum Well Modulators and Silicon Metal-Oxide-Semiconductor Transistors" presented at the 1993 Quantum Optoelectronics meeting, Palm Springs, Calif.
J. Wielan, H. Melchior, M. Q. Kearly, C. Morris, A. J. Moseley, M. G. Goodwin, and R. C. Goodfellow "Optical Receiver Array In Silicon Bipolar Technology With Selfaligned, Low Parasitic III/V Detectors For DC-1 Gbits/s Parallel Links" in Electron Lett,, vol. 27, p. 2211, 1991.
WR C. Camperi-Ginestet, M. Hargis, N. Jokerst, and M. Allen, "Alignable Epitaxial Liftoff of GaAs Materials with Selective Deposition Using Polyimide Diaphragms", IEEE Photon. Tech. Lett. vol. 3, 1123, 1991.
D'Asaro Lucian A.
Dahringer Donald W.
Goossen Keith W.
Walker James A.
Lucent Technologies - Inc.
Powell William
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