Integrated complementary transistor circuit at an intermediate s

Details Integrated complementary transistor circuit at an intermediate s Integrated complementary transistor circuit at an intermediate s

1983-06-10

1987-04-14

Hearn, Brian E.

Metal treatment

Barrier layer stock material, p-n type

With non-semiconductive coating thereon

29571, 29577C, 29576B, 29578, 148 33, 148 15, 357 42, H01L 21263

Patent

active

046576029

ABSTRACT:
An integrated complementary transistor circuit at an intermediate stage of manufacturing comprises a semiconductor substrate having dopant atoms of a first conductivity type and having a substantially flat major surface; a patterned layer of material that is essentially impervious to oxygen diffusion covering first and second spaced apart areas on the surface and having openings which expose the surface between the areas; a channel stop region having dopant atoms of the first conductivity type with a larger doping concentration than the substrate throughout that portion of the surface which is exposed by the openings; and a well region having dopant atoms of a second conductivity type opposite to the first type in the substrate under all of the second area and extending under an adjacent portion of the channel stop region but terminating before reaching the first area; the well region also having a depth and doping concentration at the center of the second area which is substantially smaller than the depth and doping concentration below the channel stop region and adjacent portion of the second area.

REFERENCES:
patent: 3450961 (1969-06-01), Tsai
patent: 4027380 (1977-06-01), Deal et al.
patent: 4244752 (1981-01-01), Henderson Sr. et al.

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