Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-10-16
2010-10-12
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S392000, C257SE27060
Reexamination Certificate
active
07812408
ABSTRACT:
An integrated circuit is provided with groups of transistors that handle different maximum voltage levels. The transistors may be metal-oxide-semiconductor transistors having body, source, drain, and gate terminals. The gate of each transistor may have a gate insulator and a gate conductor. The gate conductor may be formed from a semiconductor such as polysilicon. Adjacent to the gate insulator, the polysilicon gate conductor may have a depletion layer. The depletion layer may have a thickness that is related to the doping level in the polysilicon gate conductor. By reducing the doping level in the polysilicon gates of some of the transistors, the equivalent oxide thickness of those transistors is increased, thereby enhancing their ability to withstand elevated voltages without experiencing gate oxide breakdown due to hot carrier injection effects.
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McElheny Peter J.
Ratnakumar Albert
Altera Corporation
Kellogg David C.
Taylor Earl N
Treyz G. Victor
Treyz Law Group
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