Integrated circuits; methods for operating an integrating...

Details Integrated circuits; methods for operating an integrating... Integrated circuits; methods for operating an integrating...

2007-09-17

2009-10-13

Le, Vu A (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S158000

Reexamination Certificate

active

07602637

ABSTRACT:
Embodiments of the invention relate generally to integrated circuits, to methods for operating an integrating circuit, and to memory modules. In an embodiment of the invention, an integrated circuit having a magnetic random access memory cell is provided. The magnetic random access memory cell may include a reference layer structure being polarized in a first direction, a free layer structure including at least two anti-parallel coupled ferromagnetic layers and having an anisotropy in an axis parallel to the first direction, at least one of the at least two anti-parallel coupled ferromagnetic layers being made of a material having a temperature dependent saturation magnetization moment, and a non-magnetic tunnel barrier layer structure being disposed between the reference layer structure and the free layer structure.

REFERENCES:
patent: 2007/0297222 (2007-12-01), Leuschner

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