Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-08-07
1997-11-11
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257774, 257915, 257753, 257309, H01L 27108, H01L 2941
Patent
active
056867476
ABSTRACT:
A semiconductor memory device includes, a) a semiconductor substrate; b) a field effect transistor gate positioned outwardly of the semiconductor substrate; c) opposing active areas formed within the semiconductor substrate on opposing sides of the gate; d) a capacitor electrically connected with one of the active areas; e) a bit line; f) a dielectric insulating layer positioned intermediate the bit line and the active areas; g) a bit line plug extending through the insulating layer and electrically interconnecting the bit line with the other active area, the bit line plug comprising an electrically conductive annular ring. Integrated circuitry, beyond memory devices, utilizing an annular interconnection ring are also disclosed. Such constructions having additional radially inward insulating annular rings and conductive rings are also disclosed. A method of forming a bit line over capacitor array of memory cells having such rings is also disclosed.
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Dennison Charles H.
Jost Mark
Parekh Kunal
Hardy David B.
Micro)n Technology, Inc.
Thomas Tom
LandOfFree
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