Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate
2011-03-08
2011-03-08
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Bad bit
C365S185090, C365S210100
Reexamination Certificate
active
07903485
ABSTRACT:
Embodiments of the invention relate generally to data storage and computer memory, and more particularly, to systems, integrated circuits and methods to compensate for defective memory in third dimension memory technology. In a specific embodiment, an integrated circuit is configured to compensate for defective memory cells. For example, the integrated circuit can include a memory having memory cells that are disposed in multiple layers of memory. It can also include a memory reclamation circuit configured to substitute a subset of the memory cells for one or more defective memory cells. At least one memory cell in the subset of the memory cells resides in a different plane in the memory than at least one of the one or more defective memory cells.
REFERENCES:
patent: 2005/0047226 (2005-03-01), Martinelli et al.
patent: 2005/0057961 (2005-03-01), Ahmad
Le Toan
Phung Anh
Unity Semiconductor Corporation
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