Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from liquid combined with preceding diverse...
Reexamination Certificate
2006-03-22
2008-12-02
Pert, Evan (Department: 2826)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from liquid combined with preceding diverse...
C438S612000, C438S622000, C438S637000, C438S667000, C257S666000
Reexamination Certificate
active
07459381
ABSTRACT:
A method for reducing parasitic resistance in an integrated circuit, comprises connecting first and second terminals of a first transistor to second and first plane-like metal layers, respectively; connecting third and fourth terminals of a second transistor to said first and a third plane-like metal layer, respectively; and connecting first, second and third contact portions of a fourth plane-like metal layer to said second plane-like metal layer, said first plane-like metal layer and said third plane-like metal layer, respectively.
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Marvell World Trade Ltd.
Pert Evan
Wilson Scott R
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