Integrated circuitry and method of forming a contact landing pad

Details Integrated circuitry and method of forming a contact landing pad Integrated circuitry and method of forming a contact landing pad

1997-10-07

2000-08-08

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257382, 257383, 257384, 257385, H01L 2348, H01L 2352, H01L 2940, H01L 2994

Patent

active

061005924

ABSTRACT:
Integrated circuitry and a method of forming a contact landing pad are described. The method includes, in one embodiment, providing a substrate having a plurality of components which are disposed in spaced relation to one another; forming a silicon plug spanning between two adjacent components; forming a refractory metal layer over the silicon plug and at least one of the components; reacting the silicon plug and the refractory metal layer to form a silicide layer on the silicon plug; and after forming the silicide layer removing unreacted refractory metal layer material from the substrate.

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