Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-06-28
2005-06-28
Ngô, Ngân V. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S393000, C257S412000
Reexamination Certificate
active
06911702
ABSTRACT:
A first dielectric layer is formed over a first transistor gate and a second transistor source/drain region. Contact openings are formed in the first dielectric layer to the first transistor gate and to the second transistor source/drain region. A second dielectric layer is formed over the first dielectric layer and to within the contact openings. The second dielectric layer is etched selectively relative to the first dielectric layer to form at least a portion of a local interconnect outline within the second dielectric layer to extend between the first transistor gate and the second transistor source/drain region. The etching removes at least some of the second dielectric layer within the contact openings. Conductive material is formed within the local interconnect outline within the second dielectric layer which electrically connects the first transistor gate with the second transistor source/drain region. Other aspects are disclosed.
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Doan Theresa T.
Ngo Ngan V.
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