Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design
Reexamination Certificate
2008-05-09
2010-12-07
Do, Thuan (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Nanotechnology related integrated circuit design
C716S030000, C716S030000
Reexamination Certificate
active
07849433
ABSTRACT:
Disclosed are embodiments of forming an integrated circuit with a desired decoupling capacitance and with the uniform and targeted across-chip polysilicon perimeter density. The method includes laying out functional blocks to form the circuit according to the design and also laying out one or more decoupling capacitor blocks to achieve the desired decoupling capacitance. Then, local polysilicon perimeter densities of the blocks are determined and, as necessary, the decoupling capacitor blocks are reconfigured in order to adjust for differences in the local polysilicon perimeter densities. This reconfiguring is performed in a manner that essentially maintains the desired decoupling capacitance. Due to the across-chip polysilicon perimeter density uniformity, functional devices in different regions of the chip will exhibit limited performance parameter variations (e.g., limited threshold voltage variations). Also disclosed herein are embodiments of an integrated circuit structure formed according to the method embodiments and a design structure for the integrated circuit.
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Chadwick Laura S.
Culp James A.
Hathaway David J
Polson Anthony D.
Do Thuan
Gibb I.P. Law Firm LLC
International Business Machines - Corporation
Kotulak, Esq. Richard M.
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