Static information storage and retrieval – Read/write circuit – Including level shift or pull-up circuit
Reexamination Certificate
2008-04-08
2008-04-08
Dinh, Son (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including level shift or pull-up circuit
C365S189080, C365S189120
Reexamination Certificate
active
07355905
ABSTRACT:
In one embodiment, an integrated circuit comprises at least one logic circuit supplied by a first supply voltage and at least one memory circuit coupled to the logic circuit and supplied by a second supply voltage. The memory circuit is configured to be read and written responsive to the logic circuit even if the first supply voltage is less than the second supply voltage during use. In another embodiment, a method comprises a logic circuit reading a memory cell, the logic circuit supplied by a first supply voltage; and the memory cell responding to the read using signals that are referenced to the first supply voltage, wherein the memory cell is supplied with a second supply voltage that is greater than the first supply voltage during use.
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Campbell Brian J.
Kaenel Vincent R. von
Murray Daniel C.
Santhanam Sribalan
Scott Gregory S.
Dinh Son
Merkel Lawrence J.
Meyertons Hood Kivlin Kowert & Goetzel P.C.
Nguyen Hien
P.A. Semi, Inc.
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