Integrated circuit with reverse engineering protection

Details Integrated circuit with reverse engineering protection Integrated circuit with reverse engineering protection

2006-03-07

2006-03-07

Ngô, Ngân V. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S151000, C438S183000, C438S630000

Reexamination Certificate

active

07008873

ABSTRACT:
Technique and structures for camouflaging an integrated circuit structure. The integrated circuit structure is formed by a plurality of layers of material having controlled outlines and controlled thicknesses. A layer of dielectric material of a controlled thickness is disposed among said plurality of layers to thereby render the integrated circuit structure intentionally inoperable.

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