Integrated circuit with phase-change memory cells and method...

Details Integrated circuit with phase-change memory cells and method... Integrated circuit with phase-change memory cells and method...

2011-03-22

2011-03-22

Phan, Trong (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S163000, C365S175000

Reexamination Certificate

active

07911822

ABSTRACT:
The present invention relates to an integrated circuit comprising a plurality of bitlines (b1) and a plurality of word-lines (w1) as well as a plurality of memory-cells (MC) coupled between a separate bit-line/word-line pair of the plurality of bit-lines (b1) and wordlines (w1) for storing data in the memory cell. Each memory cell (MC) comprises a selecting unit (T) and a programmable resistance (R). The value of the phase-change resistance (R) is greater than the value of a first phase-change resistance (Ropt) defined by a supply voltage (Vdd) divided by a maximum drive current (Im) through said first phase-change resistor (Ropt).

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