Integrated circuit with memory comprising an internal circuit fo

Details Integrated circuit with memory comprising an internal circuit fo Integrated circuit with memory comprising an internal circuit fo

1998-09-16

2000-09-26

Nelms, David

Static information storage and retrieval

Read/write circuit

Including level shift or pull-up circuit

36518909, G11C 700

Patent

active

061250635

ABSTRACT:
In a memory integrated circuit comprising an internal circuit for the generation of a programming high voltage and comprising a first pad designed to receive a main logic supply voltage below five volts, a second specific supply pad is designed to supply the high voltage generation circuit. This enables the application of a specific logic supply voltage with a voltage level greater than that of the main logic supply voltage in test mode or in application mode.

REFERENCES:
patent: 5109257 (1992-04-01), Kondo
patent: 5363335 (1994-11-01), Jungroth et al.
patent: 5379260 (1995-01-01), McClure
patent: 5544105 (1996-08-01), Hirose et al.
patent: 5544123 (1996-08-01), Hoshi et al.
Raul Cemea et al., "TA 7.4: A 34Mb 3.3V Serial Flash EEPROM For Solid-State Disk Applications," IEEE International Solid State Circuits Conference, vol. 38, Feb. 1, 1995, pp. 126-127.

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