Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-11-21
2006-11-21
Quach, T. N. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S503000, C257S544000
Reexamination Certificate
active
07138686
ABSTRACT:
A system-on chip (SOC) (100) and method of isolating noise in a SOC, including a plurality of noise sensitive circuit blocks (120, 220) and ESD protected pads (302, 304, 306, 308, 310, 312,and314). A VDD isolation pad (302) is connected to an N well ring (124) of the first noise sensitive circuit (120) to collect noise from the substrate (110) and isolate the circuit from the P well region (112). A ground protected pad (304) is connected to an isolated P well (126) of a first noise sensitive circuit (120). The ground pad (304) collects noise from the isolated P well (126) and sends it to ground. A dedicated ground isolation pad (306) is connected to a P well ring (224) of a second noise sensitive circuit (220). The dedicated ground isolation pad (306) collects noise from the P well ring (224) and sends it to ground. The dedicated ground isolation pad (306) and the ground pad (304) collect noise that would normally propagate between the first and second noise sensitive circuits (120, 220) and additional circuits that share the same substrate (110).
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Banerjee Suman K.
Ferrer Enrique
Hartin Olin L.
Secareanu Radu M.
Freescale Semiconductor Inc.
Ingrassia,Fisher &Lorenz
Quach T. N.
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