Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-02-25
2000-03-07
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257356, 257360, 257531, H01L 2362, H01L 2900
Patent
active
060344008
ABSTRACT:
An MOS integrated circuit device with improved electrostatic protection capability includes high and low voltage rails for bringing externally-supplied power to points within the chip. Input bonding pads communicate input signals to the chip from external sources. Clamping circuitry connected to the input bonding pads clamps the input bonding pads to the low voltage rail during an electrostatic discharge event appearing on the input bonding pads. A receiver circuit is coupled to each input bonding pad. Each receiver circuit has a receiver input node, a receiver output node, and overvoltage-sensitive MOS circuitry between the input and output nodes. A conductor connects each input bonding pad to its receiver circuit. The conductor has a length greater than the distance between the input bonding pad and its receiver circuit. The conductor has an inductance sufficient to prevent high frequency components of ESD events received at an input bonding pad from reaching its receiver circuit. The conductor includes at least one fold for extending the length of the conductor to exceed the distance between the input bonding pad and the receiver input node.
REFERENCES:
patent: 4819047 (1989-04-01), Gilfeather et al.
patent: 5173755 (1992-12-01), Co et al.
patent: 5237395 (1993-08-01), Lee
patent: 5446311 (1995-08-01), Ewen et al.
Imbruglia Antonio
Waggoner Charles D.
Zambrano Raffaele
Galanthay Theodore E.
Jorgenson Lisa K.
Loke Steven H.
STMicroelectronics Inc.
Thoma Peter J.
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