Integrated circuit with ESD protection

Details Integrated circuit with ESD protection Integrated circuit with ESD protection

1998-01-20

1999-07-27

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257356, 257360, 257173, 257546, H01L 2362, H01L 2900

Patent

active

059294914

ABSTRACT:
A parasitic field effect transistor or a parasitic diode is formed in an integrated circuit. The parasitic element is formed by two doped regions of the same or opposite conductivity type and an insulating region therebetween. The doped regions are each connected to a respective terminal pad of the integrated circuit. To increase the ESD strength, the length of the insulating region in the lateral direction is greater than or equal to a length of the longest discharge path of the ESD protection structures connected to the terminal pads.

REFERENCES:
patent: 5293057 (1994-03-01), Ho et al.
patent: 5426323 (1995-06-01), Reczek et al.
patent: 5449939 (1995-09-01), Horiguchi et al.
patent: 5698886 (1997-12-01), Thenoz et al.
patent: 5705841 (1998-01-01), Yu

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