Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-06-06
1997-06-10
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257362, 257506, 257565, 257586, H01L 2906
Patent
active
056379013
ABSTRACT:
A diode-connected transistor device for IC protection against electrostatic discharge (ESD) that functions as a transistor in the active region during an ESD event. The device cell includes an annular collector at the outer reaches of the cell, a circular base diffusion concentric with the collector, and an annular emitter near the outer edge of the base. The base and emitter regions are connected together by metallization external to the transistor cell. With the base contact enclosed by the annular emitter, during an ESD spike the initial reverse bias current flow is from the collector, under the emitter diffusion and out of the base contact. Eventually, as the magnitude of the ESD spike increases, the reverse biased current becomes sufficient to locally forward bias the base-emitter junction changing the primary ESD current path from collector to base, to collector to emitter, thus lowering the ESD current density in the active base-collector junction. Hence, the active emitter area is significantly increased with only a small increase in transistor area, resulting in reduced power density and joule heating, and increased overall ESD tolerance without significant change in parasitic capacitance.
REFERENCES:
patent: 3740835 (1973-06-01), Duncan
patent: 4100561 (1978-07-01), Ollendorf
patent: 4295266 (1981-10-01), Hsu
Beigel David F.
Krieger William A.
Wolfe Edward L.
Analog Devices Inc.
Carroll J.
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