Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With contact or metallization configuration to reduce...
Reexamination Certificate
2007-04-10
2007-04-10
Tran, Long K. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With contact or metallization configuration to reduce...
C257S635000, C257SE21575
Reexamination Certificate
active
10678980
ABSTRACT:
An integrated circuit including a copper interconnection layer includes an aluminum distribution layer overlying the copper interconnection layer to distribute external electrical signals such as power, ground, and clock signals throughout the die of the device. The distribution layer overlies the copper interconnection layer in a grid pattern which connects to the copper interconnection layer through a plurality of vias. The distribution layer further includes a plurality of wire bond pads to permit wire bonding between the distribution layer and bonding pads of the integrated circuit package.
REFERENCES:
patent: 5128737 (1992-07-01), van der Have
patent: 5410107 (1995-04-01), Schaper
patent: 2004/0023436 (2004-02-01), Lee
Cusack Michael D.
Kaw Ravindhar K.
Kelly Michael G.
Salcido, Jr. Salvador
Avago Technologies General IP ( Singapore) Pte. Ltd.
Tran Long K.
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