Integrated circuit with breakdown voltage multiplier

Details Integrated circuit with breakdown voltage multiplier Integrated circuit with breakdown voltage multiplier

2008-01-22

2008-01-22

Cho, James H. (Department: 2819)

Electronic digital logic circuitry

Interface

Current driving

C326S075000

Reexamination Certificate

active

07321242

ABSTRACT:
An apparatus and method for driving an output signal in a high speed integrated circuit. The apparatus and methods enable the output voltage swing from the driver to exceed the breakdown voltage of any individual element in the output driver. A high speed driver can utilize one or more transistors in a stacked configuration, such that the breakdown voltage of the entire stacked configuration is based on the number of transistors in the stack. The driver is configured to distribute the output voltage substantially equally among each of the stacked transistors, such that the driver is able to source an output voltage swing that is greater than the breakdown voltage of any individual transistor in the driver.

REFERENCES:
patent: 6104218 (2000-08-01), Ueno
patent: 6147540 (2000-11-01), Coddington
patent: 6693469 (2004-02-01), Prodanov
Rein, H.-M, et al. A Versatile Si-Bipolar Driver Circuit with High Output Voltage Swing for External and Direct Laser Modulation in 10 Gb/s Optical-Fiber Links,IEEE J. Solid-State Circuits(1994) 29(9):1014-1021.
Schmid, R., et al. “40Gbit/s EAM driver IC in SiGe bipolar technology”,Electronics Letters, (1998) 34(11):1095-1097.
Schmid, R., et al. “SiGe Circuit with High Output Amplitude Operating up to 23 Gb/s”,IEEE J. Solid-State Circuits, (1999) 34:886-891.
Friedman, D.J., et al. “SiGe BiCOMS integrated circuits for high-speed serial communication links”,IBM J. Research&Development(2003) 47(2/3):277-279.

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