Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2011-01-11
2011-01-11
Fahmy, Wael M (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S201000, C257S202000, C257S712000, C257SE23002, C257SE21218, C257S206000
Reexamination Certificate
active
07868415
ABSTRACT:
An integrated circuit is described. The integrated circuit may have: an active area line formed of a material of a semiconductor substrate with a first longitudinal direction parallel to an upper surface of the semiconductor substrate; wherein the active area line has at least one form-supporting element extending in a second longitudinal direction parallel to the upper surface of the semiconductor substrate; and wherein the second longitudinal direction is arranged with regard to the first longitudinal direction in an angle unequal to 0 degree and unequal to 180 degree.
REFERENCES:
patent: 2005/0255387 (2005-11-01), Butt et al.
patent: 2006/0245233 (2006-11-01), Mikolajick et al.
Friederich Christoph
Keitel-Schulz Doris
Specht Michael
Willer Josef
Armand Marc
Economou John S.
Fahmy Wael M
Qimonda AG
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