Integrated circuit with a metal silicide film uniformly formed

Details Integrated circuit with a metal silicide film uniformly formed Integrated circuit with a metal silicide film uniformly formed

1997-03-10

1998-11-10

Everhart, Carndad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438535, 438581, 438664, 438683, 148DIG144, H01K 2144

Patent

active

058343687

ABSTRACT:
A method for manufacturing an integrated circuit, wherein, before providing an IC composite by forming a metal film on an IC assembly which includes a semiconductor substrate and a silicon part formed along the substrate and consisting essentially of silicon, an amorphous region is formed into the silicon part. The IC composite is subjected to first primary and secondary heat treatments in a nitrogen atmosphere and then to a second heat treatment at 600.degree.-700.degree. C., 700.degree.-900.degree. C., and 700.degree.-900.degree. C. to turn the metal film on the silicon part into a metal silicide film of excellent uniformity. The assembly has a silicon dioxide portion, on which the metal film is turned during the first primary and secondary heat treatments into a metal nitride film. The second heat treatment is carried out after the removal of the metal nitride film.

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W. Rausch, et al. "Palladium silicide contact resistance stabilization by ion implantation" IBM Tech. Discl. Bull. (Dec. 1981) vol. 24 No. 7A p. 3453.

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