Integrated circuit with a contact structure including a...

Details Integrated circuit with a contact structure including a... Integrated circuit with a contact structure including a...

2011-08-30

2011-08-30

Smoot, Stephen W (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S520000, C257S774000, C257SE23152

Reexamination Certificate

active

08008729

ABSTRACT:
An integrated circuit includes a contact structure with a buried first and a protruding second portion. The buried first portion is arranged in a cavity formed in a semiconductor structure and is in direct contact with the semiconductor structure. The protruding second portion is arranged above the main surface of the semiconductor structure and in direct contact with a conductive structure that is spaced apart from or separated from the main surface of the semiconductor structure. An insulator structure is arranged below and in direct contact with the contact structure.

REFERENCES:
patent: 6077740 (2000-06-01), Jeng et al.
patent: 2001/0029100 (2001-10-01), Huang et al.
patent: 2006/0255387 (2006-11-01), Dudek
patent: 2009/0302380 (2009-12-01), Graf et al.

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