Integrated circuit well isolation structures

Details Integrated circuit well isolation structures Integrated circuit well isolation structures

2011-03-08

2011-03-08

Wilczewski, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S376000, C257S499000, C257S506000, C257S528000, C257S529000, C257S530000, C365S178000

Reexamination Certificate

active

07902611

ABSTRACT:
An integrated circuit is provided with transistor body regions that may be independently biased. Some of the bodies may be forward body biased to lower threshold voltages and increase transistor switching speed. Some of the bodies may be reverse body biased to increase threshold voltages and decrease leakage current. The integrated circuit may be formed on a silicon substrate. Body bias isolation structures may be formed in the silicon substrate to isolate the bodies from each other. Body bias isolation structures may be formed from shallow trench isolation trenches. Doped regions may be formed at the bottom of the trenches using ion implantation. Oxide may be used to fill the trenches above the doped region. A deep well may be formed under the body regions. The deep well may contact the doped regions that are formed at the bottom of the trenches.

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