Integrated circuit system with dummy region

Details Integrated circuit system with dummy region Integrated circuit system with dummy region

2006-01-25

2008-11-04

Garber, Charles D. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S691000, C438S926000, C257SE21214, C257SE21585

Reexamination Certificate

active

07446039

ABSTRACT:
An integrated circuit system comprised by forming a first region, a second region and a third region within a dielectric over a substrate. The first region includes tungsten plugs. The second region is formed adjacent at least a portion of the perimeter of the first region and the third region is formed between the first region and the second region. An opening is formed in the third region and a material is deposited within the opening for preventing erosion of the first region.

REFERENCES:
patent: 5909628 (1999-06-01), Chatterjee et al.
patent: 5916855 (1999-06-01), Avanzino et al.
patent: 6093631 (2000-07-01), Jaso et al.
patent: 6849946 (2005-02-01), Sethuraman et al.
patent: 2002/0106886 (2002-08-01), Sethuraman et al.

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