Integrated circuit substrate material and method

Details Integrated circuit substrate material and method Integrated circuit substrate material and method

2006-11-14

2006-11-14

Whitehead, Jr., Carl (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Insulating material

C428S406000

Reexamination Certificate

active

07135767

ABSTRACT:
A semiconductor substrate is presented which is manufactured from hollow, gas-filled glass or ceramic microspheres, which are bound together in a dried or fired matrix. The microspheres may be glass-coated microspheres, which are bound together by sintering the outer layers of glass together. The semiconductor surface may be smoothed by glazing the surface.

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Bae et al. Derwent Abstracted Publication No. KR2002007774A “Ceramic hollow microsphere production” Jul. 22, 2003.
Lodel Nitt KK Derwent Abstracted Publication No. JP2003017481A “Low dielectric constant insulating film material for semiconductor device, includes hollow microsphere element”.
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3M Specialty Additives—Home page, http://www.3m.com/microspheres/content.html, printed as of Jul. 22, 2003.

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