Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-11-22
1997-06-17
Brown, Peter Toby
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257413, 257754, 257760, H01L 21473
Patent
active
056400381
ABSTRACT:
An integrated circuit structure including a conductive layer, a first dielectric layer overlying the conductive layer, a second dielectric layer overlying both the first dielectric layer and the conductive layer and a planarizing layer overlying the second dielectric layer. The conductive layer has a lateral dimension which is greater than a corresponding lateral dimension of the first dielectric layer. Thus the conductive layer and the first dielectric layer form a stepped, pyramidal shaped island. As a result of the stepped, pyramidal shape, the overlying planarizing layer forms with a more planar upper surface than if the sidewall of the island had a vertical profile. In one preferred embodiment of the present invention, the conductive layer is formed from tungsten-silicide, and both of the dielectric layers are either silicon dioxide or silicon nitride.
REFERENCES:
patent: 5003062 (1991-03-01), Yen
patent: 5210435 (1993-05-01), Roth et al.
patent: 5317192 (1994-05-01), Chen et al.
patent: 5479054 (1995-12-01), Tottori
patent: 5502324 (1996-03-01), Hachisuka et al.
Hall Stacy W.
Sparks Eric A.
Brown Peter Toby
VLSI Technology Inc.
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