Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-03-22
2005-03-22
Zarabian, Amir (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S336000, C257S337000, C257S339000, C257S341000, C257S342000
Reexamination Certificate
active
06870218
ABSTRACT:
A semiconductor integrated circuit including an LDMOS device structure includes a semiconductor layer with a pair of spaced-apart field effect gate structures over an upper surface of the semiconductor layer. First and second spaced-apart source regions of a first conductivity type are formed in a portion of the layer between the pair of gate structures with a first region of a second conductivity type formed there between. A lightly doped body region of a second conductivity type is formed in the semiconductor layer, extending from below the source regions to below the gate structures and extending a variable depth into the semiconductor layer. This body region is characterized by an inflection in depth in that portion of the body region extending below the first region.
REFERENCES:
patent: 5079608 (1992-01-01), Wodarczyk et al.
patent: 5216275 (1993-06-01), Chen
patent: 5272098 (1993-12-01), Smayling et al.
patent: 5567634 (1996-10-01), Hebert et al.
patent: 5684319 (1997-11-01), Hebert
patent: 5792687 (1998-08-01), Jeng et al.
patent: 5852314 (1998-12-01), Depetro et al.
patent: 5854099 (1998-12-01), Farrenkopf
patent: 5879968 (1999-03-01), Kinzer
patent: 5891776 (1999-04-01), Han et al.
patent: 5907169 (1999-05-01), Hshieh et al.
patent: 5930630 (1999-07-01), Hshieh et al.
patent: 5960275 (1999-09-01), So et al.
patent: 5970329 (1999-10-01), Cha
patent: 6025237 (2000-02-01), Choi
patent: 6049104 (2000-04-01), Hshieh et al.
patent: 6114207 (2000-09-01), Okabe et al.
patent: 6198127 (2001-03-01), Kocon
patent: 6252278 (2001-06-01), Hsing
patent: 6264167 (2001-07-01), Hamazawa
patent: 6268626 (2001-07-01), Jeon
patent: 6277695 (2001-08-01), Williams et al.
patent: 6365932 (2002-04-01), Kouno et al.
patent: 6376878 (2002-04-01), Kocon
patent: 6661042 (2003-12-01), Hsu
patent: 20020050619 (2002-05-01), Kawaguchi et al.
patent: 20020195654 (2002-12-01), Kwon
patent: 20030040159 (2003-02-01), Sasaki
patent: 0747966 (1996-12-01), None
A. Moscatelli, A. Merlini, G. Croce, P> Galbiati, and C. Contiero, LDMOS Implementation in a 0.35 m BCD Technology (BCD6), ISPSD'2000 Copyright 2000 by theIEEE. Catalog No. 00CH37094C, STicroelectronics, TPA Group, Cornaredo (Milano), Italy.
V. Parthasarathy, R. Zhu, M.L. Ger, V. Khemka, A. Bose, R. Baird, T. Roggenbauer, D. Collins, S. Change, P. Hui and M. Zunino, A 0.35 m CMOS Based Smart Power Technology for 7v-50v Applications, ISPSD′2000 Copyrihht 2000 by the IEEE, Catalog No. 00CH37094C, Smart MOS Technology Ctr, Mesa, AZ 85202.
Fairchild Semiconductor Corporation
Fitzgerald, Esq. Thomas R.
Roach, Esq. Laurence S.
Soward Ida M.
Zarabian Amir
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