Integrated circuit structure with active elements of bipolar tra

Details Integrated circuit structure with active elements of bipolar tra Integrated circuit structure with active elements of bipolar tra

1986-11-26

1988-03-22

James, Andrew J.

357 35, 357 49, 357 55, 357 59, H01L 2972, H01L 2712, H01L 2906, H01L 2904

Patent

active

047332875

ABSTRACT:
A bipolar transistor susceptible to high level integration has its active regions formed in slots within a semiconductor substrate. In one embodiment, the emitter is formed within a slot and has a surrounding region doped to function as a base. A collector is formed in another slot which is located adjacent but spaced apart from the emitter slot. Carrier transport occurs principally horizontally between the emitter and base and then to the collector. Additional slots may be used to isolate the slot transistor in conjunction with a horizontally disposed pn junction and a buried collector. The collector may be formed in a slot which contains an oxidized outer sidewall that serves to isolate the individual transistor.

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