Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-04-26
2011-04-26
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S501000, C257S506000, C257SE29018
Reexamination Certificate
active
07932565
ABSTRACT:
An integrated circuit structure comprises a semiconductor substrate, a device region positioned in the semiconductor substrate, an insulating region adjacent to the device region, an isolation structure positioned in the insulating region and including a bottle portion and a neck portion filled with a dielectric material, and a dielectric layer sandwiched between the device region and the insulation region.
REFERENCES:
patent: 6566177 (2003-05-01), Radens et al.
patent: 2006/0043472 (2006-03-01), Wang et al.
patent: 2007/0238233 (2007-10-01), Sadaka et al.
patent: 543109 (2003-07-01), None
Tsai Wen Li
Wu Hsiao Che
King Anthony
Pert Evan
ProMOS Technologies Inc.
Wilson Scott
WPAT, P.C.
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