Integrated circuit structure comprising a zirconium titanium oxi

Details Integrated circuit structure comprising a zirconium titanium oxi Integrated circuit structure comprising a zirconium titanium oxi

1996-02-01

1998-05-19

Ivy, C. Warren

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

438785, 257535, 257532, 257516, H01L 2976

Patent

active

057539456

ABSTRACT:
An integrated circuit structure including dielectric barrier layer compatible with perovskite ferroelectric materials and comprising zirconium titanium oxide, ZrTiO.sub.4, and a method of formation of the dielectric barrier layer by sol gel process is described. The amorphous, mixed oxide barrier layer has excellent dielectric properties up to GHz frequencies, and crystallizes above 800.degree. C., facilitating device processing. In particular, the barrier layer is compatible with lead containing perovskites, including PZT and PLZT ferroelectric dielectrics for example for application in non-volatile memory cells, and high value capacitors for integrated circuits, using silicon or GaAs integrated circuit technologies.

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