Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-02-03
1999-02-02
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257369, 257659, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
058669337
ABSTRACT:
An integrated circuit is protected from reverse engineering by connecting doped circuit elements of like conductivity with a doped implant in the substrate, rather than with a metallized interconnect. The doped circuit elements and their corresponding implant interconnections can be formed in a common fabrication step with common implant masks, such that they have an integral structure with similar dopant concentrations. The metallization above the substrate surface can be designed to provide further masking of the interconnects, and microbridges can be added to span strips of transistor gate material in the interconnect path.
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Baukus James P.
Chow Lap-Wai
Clark Jr. William M.
Kramer Allan R.
Denson-Low W. K.
Duraiswamy V. D.
Hughes Electronics Corporation
Ngo Ngan V.
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