Integrated circuit packaging design and method

Details Integrated circuit packaging design and method Integrated circuit packaging design and method

2005-03-15

2005-03-15

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S108000, C438S109000, C438S612000, C438S613000, C438S106000

Reexamination Certificate

active

06867124

ABSTRACT:
A system may direct first energy to only a first interconnect element, the first interconnect element contacting a first conductive contact of a first device and a second conductive contact of a second device. A first electrical connection may be formed between the first conductive contact and the second conductive contact based at least in part on the first energy. Further, second energy may be directed to only a second interconnect element, the second interconnect element contacting a third conductive contact of the first device and a fourth conductive contact of the second device. A second electrical connection may be formed between the third conductive contact and the fourth conductive contact based at least in part on the second energy.

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