Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Wire contact – lead – or bond
Reexamination Certificate
2005-11-18
2009-12-01
Monbleau, Davienne (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Wire contact, lead, or bond
C257S685000, C257S777000, C257S773000, C257S782000, C257SE23067
Reexamination Certificate
active
07626277
ABSTRACT:
An integrated circuit package comprises a substrate including a core layer with a through opening and vias. A first conductive layer is on the core layer covering the through opening and a second conductive layer is on the core layer opposite the first conductive layer in the through opening and in the vias contacting the first conductive layer. An integrated circuit die is bonded to the second conductive layer and in the through opening. Connections are between the integrated circuit die and the second conductive layer, and the integrated circuit die and the connections are encapsulated.
REFERENCES:
patent: 5541450 (1996-07-01), Jones et al.
patent: 6515356 (2003-02-01), Shin et al.
patent: 6537848 (2003-03-01), Camenforte et al.
patent: 2003/0025199 (2003-02-01), Wu et al.
Filoteo, Jr. Dario S.
Li Jian Jun
Shim Il Kwon
Tan Kwee Lan
Ishimaru Mikio
Monbleau Davienne
Nguyen Dilinh P
St Assembly Test Services Ltd.
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