Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Flip chip
Reexamination Certificate
2006-11-28
2006-11-28
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Flip chip
C257S660000, C257S686000
Reexamination Certificate
active
07141883
ABSTRACT:
An electromagnetically-shielded high-Q inductor may be fabricated within a multi-layer package substrate (MLS). The inductor is preferably constructed as a loop structure on a layer of the MLS, and a shielding structure is formed around the inductor to substantially enclose the inductor in a Faraday cage-like enclosure. The shielding structure includes a top plate formed above the inductor on another layer of the MLS, and a bottom plate formed on yet another layer of the MLS or on a layer of an integrated circuit die which is below and attached to the MLS, preferably using solder bumps. Shielding structure sidewalls may be formed by a ring of stacked vias or via channels. The inductor is preferably connected to stacked vias which provide a connection to the underlying integrated circuit die by way of additional solder bumps and cut-outs through the bottom plate of the shielding structure.
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Pietruszynski David M.
Proffitt Steven P.
Shi Ying
Smith Kevin G.
Thomsen Axel
Silicon Laboratories Inc.
Vu Hung
Zagorin O'Brien Graham LLP
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