Integrated circuit metallization with reduced electromigration

Details Integrated circuit metallization with reduced electromigration Integrated circuit metallization with reduced electromigration

1985-03-11

1988-05-17

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156644, 156646, 156653, 156651, 156657, 437187, 437192, 437194, 437228, B44C 122, C03C 1500, C03C 2506

Patent

active

047448580

ABSTRACT:
The specification discloses a method and a device wherein circuit elements (10) are formed on the surface of a semiconductor body (12). A layer of oxide (22) is applied over the circuit element (10). An aperture (32) is opened through the oxide layer (22). The surface of oxide layer (22) is nonuniformly substantially roughened. A layer of metal (24) such as aluminum is formed over the oxide layer (22) and extends into the aperture (32) for contact with a portion of the device (10). The layer of metal (24) has increased granular structure and a roughened exterior surface to provide enhanced electromigration properties.

REFERENCES:
patent: 4394406 (1983-07-01), Gardiner et al.
patent: 4508815 (1985-04-01), Ackmann et al.

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