Integrated circuit metallization using a titanium/aluminum...

Details Integrated circuit metallization using a titanium/aluminum... Integrated circuit metallization using a titanium/aluminum...

2005-06-07

2005-06-07

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S685000

Reexamination Certificate

active

06903017

ABSTRACT:
An integrated circuit metallization structure using a titanium/aluminum alloy, and a method to generate such a structure, provide reduced leakage current by allowing mobile impurities such as water, oxygen, and hydrogen to passivate structural defects in the silicon layer of the IC. The titanium layer of the structure is at least partially alloyed with the aluminum layer, thereby restricting the ability of the titanium to getter the mobile impurities within the various layers of the IC. Despite the alloying of the titanium and aluminum, the metallization structure exhibits the superior contact resistance and electromigration properties associated with titanium.

REFERENCES:
patent: 5700718 (1997-12-01), McTeer
patent: 5747879 (1998-05-01), Rastogi et al.
patent: 5838052 (1998-11-01), McTeer

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