Integrated circuit memory with write assist

Static information storage and retrieval – Systems using particular element – Flip-flop

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S156000

Reexamination Certificate

active

11392961

ABSTRACT:
An integrated circuit memory includes memory cells2is connected to a power supply Vdd via a power supply control circuit4. The power supply control circuit includes a first gate26and a second gate28. The first gate26is switched by a write assist circuit so as to be non-conductive when writing to the memory cell2. The second gate28is conductive both when writing to the memory cell2and when not writing to the memory cell2. Accordingly, when a write operation is made a relatively high resistance path is formed through the power supply control circuit4compared to when writing is not being performed. This increase in the resistance through the power supply control circuit4during write operations induces a dip in the virtual supply voltage provided at the supply output of the power supply control circuit4in a manner which assist writes to be made. If individual memory cells2tend to resist changes in their state more strongly, then they will tend to draw more current which will in turn result in a larger virtual supply voltage dip which will assist more strongly in encouraging those memory cells2to change state.

REFERENCES:
patent: 5267197 (1993-11-01), McClure
patent: 5764564 (1998-06-01), Frake et al.
patent: 6788566 (2004-09-01), Bhavnagarwala et al.
patent: 6804143 (2004-10-01), Hobson
Zhang et al., “A 3-GHz 70Mb SRAM in 65nm CMOS Technology with Integrated Column-Based Dynamic Power Supply”, 2005 IEEE International Solid-State Circuits Conference, Session 26, Non-Volatile Memory, 26.1, pp. 474-475, 611, Feb. 9, 2005.
Yamaoka et al., “Low Power Embedded SRAM Modules with Expanded Margins for Writing”, 2005 IEEE International Solid-State Circuits Conference, Session 26, Static Memory, 26.4, pp. 480-481, 611, Feb. 9, 2005.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Integrated circuit memory with write assist does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit memory with write assist, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit memory with write assist will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3912465

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.