Integrated circuit memory with offset capacitor

Details Integrated circuit memory with offset capacitor Integrated circuit memory with offset capacitor

2006-09-19

2006-09-19

Schillinger, Laura M (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S309000, C257S308000

Reexamination Certificate

active

07109545

ABSTRACT:
A capacitor for use in integrated circuits comprises a layer of conductive material. The layer of conductive material including at least a first portion and a second portion, wherein the first portion and the second portion are arranged in a predetermined pattern relative to one another to provide a maximum amount of capacitance per semiconductor die area.

REFERENCES:
patent: 5059920 (1991-10-01), Anderson et al.
patent: 5142438 (1992-08-01), Reinberg et al.
patent: 5162248 (1992-11-01), Dennison et al.
patent: 5185282 (1993-02-01), Lee et al.
patent: 5238862 (1993-08-01), Blalock et al.
patent: 5266512 (1993-11-01), Kirsch
patent: 5281548 (1994-01-01), Prall
patent: 5300801 (1994-04-01), Blalock et al.
patent: 5384152 (1995-01-01), Chu et al.
patent: 5436188 (1995-07-01), Chen
patent: 5583359 (1996-12-01), Ng et al.
patent: 5595928 (1997-01-01), Lu et al.
patent: 5597756 (1997-01-01), Fazan et al.
patent: 5652170 (1997-07-01), Keller et al.
patent: 5700731 (1997-12-01), Lin et al.
patent: 5744387 (1998-04-01), Tseng
patent: 5759894 (1998-06-01), Tseng et al.
patent: 5792680 (1998-08-01), Sung et al.
patent: 5851898 (1998-12-01), Hsia et al.
patent: 5885865 (1999-03-01), Liang et al.
patent: 5902126 (1999-05-01), Hong et al.
patent: 5920763 (1999-07-01), Schuegraf
patent: 5933725 (1999-08-01), Kirsch et al.
patent: 5943582 (1999-08-01), Huang et al.
patent: 5985732 (1999-11-01), Fazan et al.
patent: 6010942 (2000-01-01), Chien et al.
patent: 6025624 (2000-02-01), Figura
patent: 6037213 (2000-03-01), Shih et al.
patent: 6037219 (2000-03-01), Lin et al.
patent: 6037234 (2000-03-01), Hong et al.
patent: 6077742 (2000-06-01), Chen et al.
patent: 6087217 (2000-07-01), Li et al.
patent: 6100136 (2000-08-01), Lin et al.
patent: 6100137 (2000-08-01), Chen et al.
patent: 6103568 (2000-08-01), Fujiwara
patent: 6130835 (2000-10-01), Scheuerlein
patent: 6133600 (2000-10-01), Sandhu
patent: 6159793 (2000-12-01), Lou
patent: 6166941 (2000-12-01), Yoshida et al.
patent: 6174769 (2001-01-01), Lou
patent: 6174782 (2001-01-01), Lee
patent: 6174817 (2001-01-01), Doshi et al.
patent: 6177309 (2001-01-01), Lee
patent: 6180452 (2001-01-01), Figura
patent: 6187624 (2001-02-01), Huang
patent: 6190960 (2001-02-01), Noble
patent: 6194229 (2001-02-01), Basceri
patent: 6194262 (2001-02-01), Noble
patent: 6194265 (2001-02-01), Chang et al.
patent: 6214688 (2001-04-01), Hwang et al.
patent: 6215187 (2001-04-01), Ooto et al.
patent: 6218239 (2001-04-01), Huang et al.
patent: 6258662 (2001-07-01), Wang et al.
patent: 6261900 (2001-07-01), Liao et al.
patent: 6274428 (2001-08-01), Wu
patent: 6294420 (2001-09-01), Tsu et al.
patent: 6319789 (2001-11-01), Carstensen
patent: 6329683 (2001-12-01), Kohyama
patent: RE37505 (2002-01-01), Blalock et al.
patent: 6352866 (2002-03-01), Basceri
patent: 6362043 (2002-03-01), Noble
patent: 6368913 (2002-04-01), Yamamoto
patent: 6372572 (2002-04-01), Yu et al.
patent: 6373084 (2002-04-01), Figura
patent: 6385020 (2002-05-01), Shin et al.
patent: 6403444 (2002-06-01), Fukuzumi et al.
patent: 6410955 (2002-06-01), Baker et al.
patent: 6417065 (2002-07-01), Wu et al.
patent: 6444538 (2002-09-01), Kwon et al.
patent: 6448146 (2002-09-01), Lee et al.
patent: 6458653 (2002-10-01), Jang
patent: 6483194 (2002-11-01), Sakao
patent: 6509245 (2003-01-01), Baker et al.
patent: 6537874 (2003-03-01), Nakamura et al.
patent: 6576946 (2003-06-01), Kanai et al.
patent: 6838719 (2005-01-01), Hwang et al.
patent: 6913966 (2005-07-01), Baker et al.
patent: 2003/0089940 (2003-05-01), Baker et al.
patent: 2003/0089941 (2003-05-01), Baker et al.
patent: 2004/0245559 (2004-12-01), Pontoh et al.
patent: 2004/0245560 (2004-12-01), Pontoh et al.
patent: 2005/0051826 (2005-03-01), Blalock et al.
patent: 2005/0051827 (2005-03-01), Blalock et al.
patent: 2005/0219927 (2005-10-01), Baker et al.
patent: 01-283860 (1989-11-01), None
Burns and Bond, “Principles of Electronic Circuits”,West Publishing Company, 1st Edition,(1987),390-396.
Gray & Meyer, “Analysis and Design of Analog Integrated Circuits”,John Wiley&sons, Inc., 3rd Edition,(1993),168-170.
Watanabe, et al., “An Advanced Technique for Fabricating Hemispherical-Grained (HSG) Silicon Storage Electrodes”,IEEE Transactions on Electron Devices, vol. 42,No. 2, (Feb. 1995),295-300.
Yamamoto, I, “Low-Temperature Metal/ON/HSG-Cylinder Capacitor Process for High Density Embedded DRAMs,”,Symposium on VLSI Technology Digest of Technical Papers, (1999),157-158.
Van Zant, Peter, “Microchip Fabrication -A practical Guide to Semiconductor Processing, McGraw Hill, 4th Edition”,McGraw Hill, (2000) 503-505

Affiliated with

Also associated with

Rating

Integrated circuit memory with offset capacitor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit memory with offset capacitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit memory with offset capacitor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3554990