Integrated circuit memory devices with high angle implant around

Details Integrated circuit memory devices with high angle implant around Integrated circuit memory devices with high angle implant around

1991-12-18

1993-06-01

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257655, H01L 2968, H01L 2978, H01L 2992

Patent

active

052162656

ABSTRACT:
A method of reducing gated diode leakage in trench capacitor type field plate isolated dynamic random access memory devices is disclosed. The storage node of the capacitor is formed by placing a storage node material, such as implanted arsenic, into the trench walls of the device at a first tilt and a second tilt. The angle of the second tilt is preferably larger, higher, than the angle of the first tilt. This higher angle provides the storage node with a larger concentration of doping around the upper portion the trench walls. This larger concentration of doping reduces the charge leaking from the upper portion of the storage node into the substrate of semiconductor material. A trench type storage capacitor for a dynamic random access memory device is also disclosed.

REFERENCES:
patent: 5017506 (1991-05-01), Shen et al.
patent: 5057887 (1991-10-01), Yashiro et al.

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