Integrated circuit memory devices including a plurality of row l

Details Integrated circuit memory devices including a plurality of row l Integrated circuit memory devices including a plurality of row l

1998-02-13

1999-01-05

Nguyen, Viet Q.

Static information storage and retrieval

Addressing

Including particular address buffer or latch circuit...

36523003, 365233, 36523006, G11C 800

Patent

active

058569529

ABSTRACT:
There is disclosed a semiconductor memory device that has a memory-cell array with memory cells arranged in a matrix, bit-line sense amplifiers connected to bit lines of the memory-cell array, a row address predecoder performing decoding of some of row address signals in response to a system clock, and a plurality of banks having an output line of the row address predecoder in common, includes: a row strobe buffer connected to an external system and producing a first control signal for selecting corresponding banks in response to the system clock, a row address strobe signal, and a bank selection address signal and for controlling generation of a row address sampling control signal; a row address sampling control signal generating circuit producing the row address sampling control signal in a predetermined period of time in response to generation of the first control signal produced by the row strobe buffer in order to control word-line activating and precharging operations; and a row decoder latching an output signal obtained by predecoding a row address with the output signal of the row address sampling control signal generating circuit.

REFERENCES:
patent: 5420869 (1995-05-01), Hatakeyama
patent: 5426606 (1995-06-01), Takai
patent: 5798978 (1998-08-01), Yoo et al.

Affiliated with

Also associated with

Rating

Integrated circuit memory devices including a plurality of row l does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit memory devices including a plurality of row l, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit memory devices including a plurality of row l will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-867087